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Radiation Effect on Layered Crystals of GaS and GaS <Yb>

Received: 29 December 2016     Accepted: 13 January 2017     Published: 13 February 2017
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Abstract

It has been conducted the analysis of IR-absorption spectra of layered single crystals of GaS and GaS <Yb>, irradiated by gamma-quanta with subsequent annealing. It has been found that, a part of impurity atoms, introduced during the growth of crystals, as well as point defects, formed by irradiation, are located in the interlayer space, that indicates the decrease in the intensity and extension of the half-width bands 188 and 184 cm-1 in the IR spectra. During the annealing (T = 150°C, t = 150 min.) of irradiated samples there occurs an increase of intensity and a decrease of the half-width of these bands, which is caused by partial annealing of radiation defects and the transition of a part of impurity atoms from the interlayer area in the layer.

Published in Colloid and Surface Science (Volume 2, Issue 1)
DOI 10.11648/j.css.20170201.16
Page(s) 43-46
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

IR-Absorption, Radiation, Semiconductor, Defects, Annealing

References
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Cite This Article
  • APA Style

    R. S. Madatov, N. N. Gadzhieva, A. I. Nadjafov, N. I. Huseynov, F. G. Asadov, et al. (2017). Radiation Effect on Layered Crystals of GaS and GaS <Yb>. Colloid and Surface Science, 2(1), 43-46. https://doi.org/10.11648/j.css.20170201.16

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    ACS Style

    R. S. Madatov; N. N. Gadzhieva; A. I. Nadjafov; N. I. Huseynov; F. G. Asadov, et al. Radiation Effect on Layered Crystals of GaS and GaS <Yb>. Colloid Surf. Sci. 2017, 2(1), 43-46. doi: 10.11648/j.css.20170201.16

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    AMA Style

    R. S. Madatov, N. N. Gadzhieva, A. I. Nadjafov, N. I. Huseynov, F. G. Asadov, et al. Radiation Effect on Layered Crystals of GaS and GaS <Yb>. Colloid Surf Sci. 2017;2(1):43-46. doi: 10.11648/j.css.20170201.16

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  • @article{10.11648/j.css.20170201.16,
      author = {R. S. Madatov and N. N. Gadzhieva and A. I. Nadjafov and N. I. Huseynov and F. G. Asadov and A. A. Abdurrahimov and D. J. Askerov},
      title = {Radiation Effect on Layered Crystals of GaS and GaS <Yb>},
      journal = {Colloid and Surface Science},
      volume = {2},
      number = {1},
      pages = {43-46},
      doi = {10.11648/j.css.20170201.16},
      url = {https://doi.org/10.11648/j.css.20170201.16},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.css.20170201.16},
      abstract = {It has been conducted the analysis of IR-absorption spectra of layered single crystals of GaS and GaS <Yb>, irradiated by gamma-quanta with subsequent annealing. It has been found that, a part of impurity atoms, introduced during the growth of crystals, as well as point defects, formed by irradiation, are located in the interlayer space, that indicates the decrease in the intensity and extension of the half-width bands 188 and 184 cm-1 in the IR spectra. During the annealing (T = 150°C, t = 150 min.) of irradiated samples there occurs an increase of intensity and a decrease of the half-width of these bands, which is caused by partial annealing of radiation defects and the transition of a part of impurity atoms from the interlayer area in the layer.},
     year = {2017}
    }
    

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  • TY  - JOUR
    T1  - Radiation Effect on Layered Crystals of GaS and GaS <Yb>
    AU  - R. S. Madatov
    AU  - N. N. Gadzhieva
    AU  - A. I. Nadjafov
    AU  - N. I. Huseynov
    AU  - F. G. Asadov
    AU  - A. A. Abdurrahimov
    AU  - D. J. Askerov
    Y1  - 2017/02/13
    PY  - 2017
    N1  - https://doi.org/10.11648/j.css.20170201.16
    DO  - 10.11648/j.css.20170201.16
    T2  - Colloid and Surface Science
    JF  - Colloid and Surface Science
    JO  - Colloid and Surface Science
    SP  - 43
    EP  - 46
    PB  - Science Publishing Group
    SN  - 2578-9236
    UR  - https://doi.org/10.11648/j.css.20170201.16
    AB  - It has been conducted the analysis of IR-absorption spectra of layered single crystals of GaS and GaS <Yb>, irradiated by gamma-quanta with subsequent annealing. It has been found that, a part of impurity atoms, introduced during the growth of crystals, as well as point defects, formed by irradiation, are located in the interlayer space, that indicates the decrease in the intensity and extension of the half-width bands 188 and 184 cm-1 in the IR spectra. During the annealing (T = 150°C, t = 150 min.) of irradiated samples there occurs an increase of intensity and a decrease of the half-width of these bands, which is caused by partial annealing of radiation defects and the transition of a part of impurity atoms from the interlayer area in the layer.
    VL  - 2
    IS  - 1
    ER  - 

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Author Information
  • Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan

  • Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan

  • Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan

  • Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan

  • Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan

  • Physics Faculty of Azerbaijan Technical University, Baku, Azerbaijan

  • Physics Faculty of Azerbaijan State University of Oil and Industry, Baku, Azerbaijan

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